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N型单晶硅片
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产品描述
Material properties
|
Item |
Specification |
Inspection method |
|
Growth method |
CZ |
|
|
Crystallinity |
Monocrystalline |
Preferential Etch Techniques (ASTM F47-88) |
|
Conductivity type |
N type |
P/N type tester (DLY-2 P/N ) |
|
Dopant |
Phosphorus |
-- |
|
Wafer model |
M10/G12 |
Wafer inspection system |
|
Thickness |
130±10µm |
Wafer inspection system |
Electrical properties
|
Item |
Specification |
Inspection method |
|
Resistivity |
0.4-1.6Ω.cm |
Wafer inspection system |
|
Minority carrier lifetime |
≥800μs |
QSSPC/Transient with injection level:1E15cm-3 (Sinton BCT-400) |
|
Oxygen concentration |
≤ 6E+17at/cm3 |
FTIR (ASTM F121-83) |
|
Carbon Concentration |
≤ 5E+16at/cm3 |
FTIR (GB/T 1558-2009) |
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