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P型单晶硅片
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产品描述
Material properties
| Item | Specification | Inspection method |
| Growth method | CZ | |
| Crystallinity | Monocrystalline | Preferential Etch Techniques (ASTM F47-88) |
| Conductivity type | P type | P/N type tester (DLY-2 P/N ) |
| Dopant | Gallium | -- |
| Wafer model | M6/M10/G12 | Wafer inspection system |
| Thickness |
155±10µm 150±10µm |
Wafer inspection system |
Electrical properties
| Item | Specification | Inspection method |
| Resistivity | 0.4-1.1Ω.cm | Wafer inspection system |
| Minority carrier lifetime | ≥50μs |
QSSPC/Transient with injection level:1E15cm-3 (Sinton BCT-400) |
| Oxygen concentration | ≤ 8E+17 at/cm3 | FTIR (ASTM F121-83) |
| Carbon Concentration | ≤ 5E+16 at/cm3 | FTIR (GB/T 1558-2009) |
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